Characterization of deep levels in semi-insulating gallium arsenide

Performance of semi-insulating gallium arsenide X-ray pixel detectors with current-integrating readout

First images are presented from tests of a semi-insulating gallium arsenide X-ray imaging detector, flip-chip bonded to a current integrating CMOS readout chip. The detector is designed for applications in synchrotron X-ray imaging. The X-ray sensing part of the detector consists of a 150 mm thick GaAs photodiode containing an array of 92 100 pixels, each 150mm by 150 mm in size. Operating the ...

Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

In this paper, a spray technique is used to perform low temperature deposition of multi-wall carbon nanotubes on semi-insulating gallium arsenide in order to obtain photodectors. A dispersion of nanotube powder in non-polar 1,2-dichloroethane is used as starting material. The morphological properties of the deposited films has been analysed by means of electron microscopy, in scanning and trans...

Gallium arsenide deep-level optical emitter for fibre optics.

Fibre-optic components fabricated on the same substrate as integrated circuits are important for future high-speed communications. One industry response has been the costly push to develop indium phosphide (InP) electronics. However, for fabrication simplicity, reliability and cost, gallium arsenide (GaAs) remains the established technology for integrated optoelectronics. Unfortunately, the GaA...

Progress to a Gallium-Arsenide Deep-Center Laser

Although photoluminescence from gallium-arsenide (GaAs) deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known properties: nature of deep-center complexes, Franck-Condon effect, photoluminescence. Second, we ...

Characterization of Deep Levels in n-type and Semi-Insulating 4H-SiC Epitaxial Layers by Thermally Stimulated Current Spectroscopy